1202.1589 (C. Hermannstäadter et al.)

Inter-dot coupling and excitation transfer mechanisms of
telecommunication band InAs quantum dots at elevated temperatures    [PDF]

C. Hermannstäadter, N. A. Jahan, J. -H. Huh, H. Sasakura, K. Akahane, M. Sasaki, I. Suemune

We investigate the photoluminescence temperature dependence of individual
InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The
high-density dots are grown on InP substrates and the selection of a smaller
dot number is done by the processing of suitable nanometer sized mesas. Using
ensembles of only a few dots inside such mesas, their temperature stability,
inter-dot charge transfer, as well as, carrier capture and escape mechanisms
out of the dots are investigated systematically. This includes the discussion
of the dot ensemble and individual dots. Among the single-dot properties, we
investigate the transition of emission lines from zero-phonon line to acoustic
phonon sideband dominated line shape with temperature. Moreover, the presence
of single recombination lines up to temperatures of around 150 K is
demonstrated.

View original: http://arxiv.org/abs/1202.1589